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  6N137 2002-09-25 1 toshiba photocoupler gaa ? as ired & photo ic 6N137 degital logic isolation tele ? communication analog data equipment control the toshiba 6N137 consist of a high emitting diode and a one chip photo ic. this unit is 8 ? lead dip package.  lsttl / ttl compatible: 5v supply  ultra high speed: 10mbd  guaranteed performance over temperature: 0c to 70c  high isolation voltage: 2500vrms min.  ul recognized: ul1577, file no. e67349 truth table input enable output h h l l h h h l h l l h v cc v o v e gnd i cc i e i o 7 i f v f 2 3 5 6 8 pin configurations (top view) 8 7 6 5 1 2 3 4 1 : n.c. 2 : anode 3 : cathode 4 : n.c. 5 : gnd 6 : output(open collector) 7 : enable 8 : v cc 8 unit in mm toshiba 11 ? 10c4 weight: 0.54g
6N137 2002-09-25 2 maximum ratings characteristic symbol rating unit forward current i f 20 ma pulse forward current (note 1) i fp 40 ma led reverse voltage v r 5 v output current i o 50 ma output voltage v o 7 v supply voltage (1 minute maximum) v cc 7 v enable input voltage (not to exceed v cc by more than 500mv) v eh 5.5 v detector output collector power dissipation p o 85 mw operating temperature range t opr 0~70 c storage temperature range t stg  55~125 c lead solder temperature (10 s) (note 2) t sol 260 c (note 1) 50% duty cycle, 1ms pulse width. (note 2) soldering portion of lead: up to 2mm from the body of the device. recommended operating conditions characteristic symbol min. max. unit input current, low level each channel i fl 0 250 a input current, high level each channel i fh 7 20 ma high level enable voltage v eh 2.0 v cc v low level enable voltage (output high) v el 0 0.8 v supply voltage, output v cc 4.5 5.5 v fan out (ttl load) n D 8 D operating temperature ta 0 70 c precaution please be careful of the followings. a ceramic capacitor(0.1f)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. failure to provide the bypassing may impair the switching property. the total lead length between capacitor and coupler should not exceed 1cm.
6N137 2002-09-25 3 electrical characteristics over recommended temperature (ta = 0~70c unless otherwise noted) characteristic symbol test condition min. (**)typ. max. unit high level output current i oh v cc =5.5v, v o =5.5v i f =250  a, v e = 2.0v D 1 250  a low level output voltage v ol v cc =5.5v, i f =5ma v eh =2.0v i ol (sinking)=13ma D 0.4 0.6 v high level enable current i eh v cc =5.5v, v e =2.0v D  1.0 D ma low level enable current i el v cc =5.5v, v e =0.5v D  1.6  2.0 ma high level supply current i cch v cc =5.5v, i f =0, v e =0.5v D 7 15 ma low level supply current i ccl v cc =5.5v, i f =10ma v e =0.5v D 12 18 ma resistance (input  output   (note 3) r i  o v i ? o =500v, ta=25c r.h. 60% D 10 12 D  capacitance (input  output   (note 3) c i  o f=1mhz, ta=25c D 0.6 D pf input forward voltage v f i f =10ma, ta=25c D 1.65 1.75 v input reverse breakdown voltage bv r i r =10  a, ta=25c 5 D D v input capacitance c in v f =0, f=1mhz D 45 D pf current transfer ratio ctr i f =5.0ma, r l =100  D 1000 D % (**) all typical values are at v cc =5v, ta=25  c (note 3) pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.
6N137 2002-09-25 4 switching characteristics (ta = 25c, v cc = 5v) characteristic symbol test circuit test condition min. typ. max. unit propagation delay time to high output level t p lh 1 r l =350  , c l =15pf i f =7.5ma D 60 75 ns propagation delay time to low output level t p hl 1 r l =350  , c l =15pf i f =7.5ma D 60 75 ns output rise  fall time (10  90%) t r , t f D r l =350  , c l =15pf i f =7.5ma D 30 D ns  propagation delay time of enable from v eh to v el t elh 2 r l =350  , c l =15pf i f =7.5ma v eh =3.0v v el =0.5v D 25 D ns  propagation delay time of enable from v el to v eh t ehl 2 r l =350  , c l =15pf i f =7.5ma v eh =3.0v v el =0.5v D 25 D ns  common mode transient immunity at logic high output level cm h 3 v cm =10v r l =350  v o(min.) =2v i f =0ma D 200 D v /  s common mode transient immunity at logic low output level cm l 3 v cm =10v r l =350  v o(max.) =0.8v i f =5ma D  500 D v /  s
6N137 2002-09-25 5 test circuit 1. ? c l is approximately 15pf which includes probe and stray wiring capacitance. test circuit 2. ? c l is approximately 15pf which includes prove and stray wiring capacitance. test circuit 3. transient immunity and typical waveforms v ol 350mv ( i f = 7.5ma ) monitoring 175mv ( i f = 3.75ma ) v oh 7 6 5 1 2 3 4 8 5v c l by- pass v cc 47 i f pulse generator z o = 50 t r = 5ns node r l output v o monitor- ing node 0.1 f gnd 1.5v output v o input t phl and t plh t phl t plh v ol v oh 7.5ma i f dc pulse generator z o = 50 t r = 5ns c l by- pass r l output monitor- ing node 0.1 f v o 7 6 5 1 2 3 4 8 5v v cc gnd input v e monitoring node 3.0v 1.5v 1.5v output v o input v e t ehl and t elh t ehl t elh v ol v o switching at b : i f = 5ma 5v v o 0v t f 10% t r switch at a : i f = 0ma 90% 90% 10% 10v 5v v o 7 6 5 1 2 3 4 8 by- pass v cc r l 0.1 f gnd pulse gen. z o = 50 . v cm a v ff i f b
6N137 2002-09-25 6 i f ? v f forward voltage v f (v) forward current i f (ma) 0.01 100 1.0 10 1.2 1.4 1.6 1.8 1 0.1 ta = 25c v f / ta ? i f forward current i f (ma) forward voltage temperature coefficient v f / ta (mv / c ) -1.6 -2.6 0.1 -2.4 -2.2 -2.0 -1.8 0.3 1 3 10 -1.4 30 i oh - ta ambient temperature ta (c) high level output current i oh ( a ) 10 3 0.5 0.3 80 60 40 20 0 0.1 1 5 v f = 1v v cc = 5.5v v o = 5.5v v o l ? ta ambient temperature ta (c) 0 20 40 60 80 0.2 0.3 0.4 0.5 i f = 5ma v cc = 5.5v v e = 2v 12.8ma 9.6m a 6.4m a i ol = 16ma low level output voltage v ol (v) forward current i f (ma) output voltage v o (v) v o ? i f 6 5 4 3 2 1 0 8 6 4 2 0 v cc = 5v r l = 350 r l = 4k 0c ta = 70c v o ? i f forward current i f (ma) output voltage v o (v) 8 2 6 4 0 1 3 4 5 0 6 2 v cc = 5v ta = 25c r l = 350 1k 4k
6N137 2002-09-25 7 ambient temperature ta (c) propageation delay time t p hl, t p lh (ns) 120 0 80 60 40 20 10 20 30 40 50 0 60 v cc = 5v i f = 7.5ma 70 100 t phl, t plh - ta tp lh tp lh tp hl 1k 4k 350 1k 350 r l = 4k t r, t f ? t a ambient temperature ta (c) rise, fall time t r , t f (ns) 300 80 40 0 0 320 60 280 20 v cc = 5v i f = 7.5ma 10 20 30 40 50 60 70 r l = 4k t f t f 1k 350 t f t r 350 1k 4k ambient temperature ta (c) t ehl, t elh - t a enable propagation delay time t ehl , t elh (ns) 70 20 30 50 40 10 60 80 70 60 50 40 30 20 10 0 0 v cc = 5v v eh = 3v i f = 7.5ma t ehl t elh t elh 1k 350 350 1k 4k t elh r l = 4k propageation delay time t p hl, t p lh (ns) t phl, t plh - i f forward current i f (ma) 120 100 17 19 20 0 15 13 11 9 7 5 40 80 60 ta = 25c v cc = 5v 350 350 t plh rl = 4k tplh 1k tphl tplh 1k 4k
6N137 2002-09-25 8  toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc..  the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk.  gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage.  the products described in this document are subject to the foreign exchange and foreign trade laws.  the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others.  the information contained herein is subject to change without notice. 000707ebc restrictions on product use


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